STD65N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Length :

6.6mm

Transistor Application :

SWITCHING

Radiation Hardening :

No

REACH SVHC :

No SVHC

FET Type :

N-Channel

Rise Time :

50ns

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Width :

6.2mm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain Current-Max (Abs) (ID) :

80A

Contact Plating :

Tin

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Power Dissipation-Max :

110W Tc

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STD65N

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0085Ohm

Turn On Delay Time :

20 ns

Power Dissipation :

110W

RoHS Status :

ROHS3 Compliant

Height :

2.4mm

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Turn-Off Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

32A

Series :

STripFET™

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Drain to Source Breakdown Voltage :

55V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Threshold Voltage :

4V

Mount :

Surface Mount

Fall Time (Typ) :

11.5 ns