STD60N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

11.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Rise Time :

50ns

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

110W

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Number of Elements :

1

Mounting Type :

Surface Mount

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Series :

STripFET™ III

Mount :

Surface Mount

Width :

6.2mm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Continuous Drain Current (ID) :

80A

Terminal Form :

Gull wing

JESD-609 Code :

e3

Power Dissipation-Max :

110W Tc

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Length :

6.6mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Base Part Number :

STD60N

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

2.4mm

Resistance :

8.5mOhm

ECCN Code :

EAR99