STD60N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Mounting Type :

Surface Mount

FET Type :

N-Channel

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Power Dissipation-Max :

110W Tc

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Height :

2.4mm

Continuous Drain Current (ID) :

80A

Vgs (Max) :

±20V

Turn On Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Length :

6.6mm

Power Dissipation :

110W

Width :

6.2mm

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Series :

STripFET™ III

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Resistance :

8.5mOhm

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Drain to Source Breakdown Voltage :

55V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

50ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Fall Time (Typ) :

11.5 ns

Terminal Finish :

Matte Tin (Sn) - annealed

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Base Part Number :

STD60N

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Elements :

1

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Number of Pins :

3