STD60N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

20 ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 32A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Breakdown Voltage :

55V

Length :

6.6mm

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Mount :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Power Dissipation :

110W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Height :

2.4mm

Number of Pins :

3

FET Type :

N-Channel

Turn-Off Delay Time :

35 ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Fall Time (Typ) :

11.5 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

80A

Radiation Hardening :

No

Series :

STripFET™ III

Number of Elements :

1

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Base Part Number :

STD60N

Number of Terminations :

2

Rise Time :

50ns

Resistance :

8.5mOhm

JESD-609 Code :

e3

Width :

6.2mm