STD60NF55LAT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW THRESHOLD

ECCN Code :

EAR99

Continuous Drain Current (ID) :

60A

Number of Pins :

3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Number of Terminations :

2

FET Type :

N-Channel

JESD-609 Code :

e3

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

15V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Voltage (Vdss) :

55V

Rise Time :

180ns

Base Part Number :

STD60N

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Turn On Delay Time :

30 ns

Series :

Automotive, AEC-Q101, SuperFET® II

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±15V

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

35 ns

Radiation Hardening :

No

Power Dissipation :

110W

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Turn-Off Delay Time :

80 ns

Pulsed Drain Current-Max (IDM) :

240A

Power Dissipation-Max :

110W Tc

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

400 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mounting Type :

Surface Mount