STD60NF55LAT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Radiation Hardening :

No

Power Dissipation-Max :

110W Tc

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

240A

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

60A Tc

JESD-609 Code :

e3

Turn-Off Delay Time :

80 ns

Fall Time (Typ) :

35 ns

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Vgs (Max) :

±15V

ECCN Code :

EAR99

Turn On Delay Time :

30 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOW THRESHOLD

DS Breakdown Voltage-Min :

55V

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Rise Time :

180ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Transistor Element Material :

SILICON

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

60A

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Base Part Number :

STD60N

Avalanche Energy Rating (Eas) :

400 mJ

Number of Pins :

3

Series :

Automotive, AEC-Q101, SuperFET® II

Power Dissipation :

110W

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

15V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ