STD65N3LLH5
- Mfr.Part #
- STD65N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N CH 30V 65A DPAK
- Stock
- 44,478
- In Stock :
- 44,478
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 65A
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STD65N
- Gate to Source Voltage (Vgs) :
- 22V
- Rise Time :
- 11.2ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 50W Tc
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Turn-Off Delay Time :
- 32.4 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Rds On (Max) @ Id, Vgs :
- 6.9m Ω @ 32.5A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Pulsed Drain Current-Max (IDM) :
- 260A
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 6 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 25V
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0097Ohm
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Series :
- STripFET™ V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Manufacturer Package Identifier :
- Figure 19
- Power Dissipation :
- 50W
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±22V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STD65N3LLH5
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N-Channel Tape & Reel (TR) 6.9m Ω @ 32.5A, 10V ±22V 1290pF @ 25V 8nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD65N3LLH5 Description
This STripFETTMV Power MOSFET technology is one of the most recent advancements, having been specifically designed to achieve extremely low on-state resistance while simultaneously giving one of the best-in-class figures of merit.
STD65N3LLH5 Features
-
RDS(on) * Qg industry benchmark
-
Extremely low on-resistance RDS(on)
-
Very low switching gate charge
-
High avalanche ruggedness
-
Low gate drive power losses
STD65N3LLH5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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