STD6NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

30W Tc

Case Connection :

DRAIN

Operating Temperature :

-65°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Power Dissipation :

30W

Vgs (Max) :

±20V

Number of Pins :

3

Height :

2.4mm

Voltage - Rated DC :

100V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

250m Ω @ 3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.6mm

Number of Terminations :

2

Continuous Drain Current (ID) :

3A

Threshold Voltage :

4V

Series :

STripFET™

Mounting Type :

Surface Mount

Current Rating :

6A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Pin Count :

3

Fall Time (Typ) :

3 ns

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOW THRESHOLD

Rise Time :

10ns

Drain Current-Max (Abs) (ID) :

6A

Number of Elements :

1

Base Part Number :

STD6N

Turn On Delay Time :

6 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

200 mJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Resistance :

250mOhm

Pulsed Drain Current-Max (IDM) :

24A

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Width :

6.2mm

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Turn-Off Delay Time :

20 ns

Terminal Form :

Gull wing