STD6N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

19 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

4A

Vgs (Max) :

±25V

Factory Lead Time :

16 Weeks

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

3V

Weight :

3.949996g

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Channels :

1

Series :

MDmesh™

Rise Time :

7ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

6.5 ns

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

226pF @ 100V

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

60W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Base Part Number :

STD6N

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

650V

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 2A, 10V

Fall Time (Typ) :

20 ns

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)