STD6N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SuperMESH3™

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

706pF @ 50V

Number of Elements :

1

Operating Temperature :

150°C TJ

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

25.7nC @ 10V

Pulsed Drain Current-Max (IDM) :

22A

Mount :

Surface Mount

Rise Time :

12.5ns

Rds On (Max) @ Id, Vgs :

1.28 Ω @ 2.8A, 10V

Drain to Source Voltage (Vdss) :

620V

Fall Time (Typ) :

19 ns

FET Type :

N-Channel

Terminal Form :

Gull wing

Length :

6.6mm

Pin Count :

3

Transistor Application :

SWITCHING

Base Part Number :

STD6N

Power Dissipation :

90W

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

90W Tc

Turn On Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Width :

6.2mm

Threshold Voltage :

3.75V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Lead Free :

Lead Free

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Height :

2.4mm

Terminal Finish :

Matte Tin (Sn) - annealed

REACH SVHC :

No SVHC

Element Configuration :

Single

Additional Feature :

ULTRA LOW-ON RESISTANCE

Resistance :

1.2Ohm

Continuous Drain Current (ID) :

5.5A

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs (Max) :

±30V

Radiation Hardening :

No

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Turn-Off Delay Time :

49 ns