STD6N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

25V

Width :

6.2mm

Continuous Drain Current (ID) :

4.5A

Mounting Type :

Surface Mount

Height :

2.4mm

Turn On Delay Time :

9.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

232pF @ 100V

Turn-Off Delay Time :

24 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

22.5 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.25A, 10V

Radiation Hardening :

No

Length :

6.6mm

Resistance :

1.2Ohm

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Lead Free :

Lead Free

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™ II Plus

Number of Pins :

3

Base Part Number :

STD6N

Rise Time :

7.4ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Power Dissipation-Max :

60W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1