SP8J5TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 10V

Transistor Element Material :

SILICON

Fall Time (Typ) :

70 ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

TIN COPPER

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Rise Time :

50ns

Published :

2003

Rds On (Max) @ Id, Vgs :

28m Ω @ 7A, 10V

Transistor Application :

SWITCHING

Current Rating :

-7A

Turn-Off Delay Time :

110 ns

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

JESD-609 Code :

e2

FET Feature :

Logic Level Gate

Voltage - Rated DC :

-30V

Lead Free :

Lead Free

Turn On Delay Time :

20 ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Number of Pins :

8

Pin Count :

8

Base Part Number :

*J5