SP8J4TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Drain Current (ID) :

2A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

2A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.235Ohm

Voltage - Rated DC :

-30V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 5V

Base Part Number :

*J4

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Rise Time :

10ns

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Current Rating :

-2A

Operating Mode :

ENHANCEMENT MODE

Published :

2003

JESD-609 Code :

e2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 10V

Transistor Application :

SWITCHING

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

8A

Rds On (Max) @ Id, Vgs :

235m Ω @ 2A, 10V

Pin Count :

8