SP8J1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Published :

2003

Pulsed Drain Current-Max (IDM) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

FET Type :

2 P-Channel (Dual)

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

8

JESD-609 Code :

e2

Terminal Finish :

TIN COPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Base Part Number :

*J1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

8

Voltage - Rated DC :

-30V

Gate to Source Voltage (Vgs) :

20V

Current Rating :

-5A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Continuous Drain Current (ID) :

5A

Fall Time (Typ) :

40 ns

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

80 ns

Max Power Dissipation :

2W

Terminal Form :

Gull wing

Number of Pins :

8

Drain-source On Resistance-Max :

0.042Ohm

Operating Temperature :

150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pbfree Code :

yes

Number of Elements :

2

Rise Time :

30ns