SI8817DB-T2-E1
- Mfr.Part #
- SI8817DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 4-XFBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4MICROFOOT
- Stock
- 41,542
- In Stock :
- 41,542
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Ball
- Rds On (Max) @ Id, Vgs :
- 76m Ω @ 1A, 4.5V
- Vgs (Max) :
- ±8V
- Power Dissipation-Max :
- 500mW Ta
- Drain to Source Voltage (Vdss) :
- 20V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 44 Weeks
- Package / Case :
- 4-XFBGA
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- -20V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Power Dissipation :
- 900mW
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Continuous Drain Current (ID) :
- 2.9A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Gate to Source Voltage (Vgs) :
- 8V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 615pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Packaging :
- Digi-Reel®
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- SI8817DB-T2-E1
P-Channel Digi-Reel® 76m Ω @ 1A, 4.5V ±8V 615pF @ 10V 19nC @ 8V 20V 4-XFBGA
SI8817DB-T2-E1 Overview
The maximum input capacitance of this device is 615pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.9A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.
SI8817DB-T2-E1 Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of -20V voltage
a 20V drain to source voltage (Vdss)
SI8817DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8817DB-T2-E1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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