SI8817DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

BOTTOM

Terminal Form :

Ball

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Number of Channels :

1

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Terminations :

4

JESD-609 Code :

e3

Element Configuration :

Single

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 10V

Power Dissipation :

900mW

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Factory Lead Time :

44 Weeks

Number of Pins :

4

Packaging :

Digi-Reel®

Radiation Hardening :

No

Package / Case :

4-XFBGA

Published :

2013

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2.9A

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

500mW Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 8V

Rds On (Max) @ Id, Vgs :

76m Ω @ 1A, 4.5V