SI8817DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

ECCN Code :

EAR99

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Ball

Rds On (Max) @ Id, Vgs :

76m Ω @ 1A, 4.5V

Vgs (Max) :

±8V

Power Dissipation-Max :

500mW Ta

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Mount :

Surface Mount

Number of Elements :

1

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Position :

BOTTOM

Factory Lead Time :

44 Weeks

Package / Case :

4-XFBGA

Number of Channels :

1

Drain to Source Breakdown Voltage :

-20V

Transistor Application :

SWITCHING

Number of Pins :

4

Power Dissipation :

900mW

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Series :

TrenchFET®

Continuous Drain Current (ID) :

2.9A

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Packaging :

Digi-Reel®

Operating Temperature :

-55°C~150°C TJ