SI8812DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Terminations :

4

Packaging :

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 8V

Number of Pins :

4

Drain-source On Resistance-Max :

0.065Ohm

Reach Compliance Code :

Unknown

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Vgs (Max) :

±5V

Factory Lead Time :

44 Weeks

Number of Elements :

1

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

59m Ω @ 1A, 4.5V

Power Dissipation :

900mW

Continuous Drain Current (ID) :

3.2A

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

500mW Ta

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Package / Case :

4-UFBGA

Terminal Form :

Ball

Transistor Application :

SWITCHING

FET Type :

N-Channel

Published :

2016

Series :

TrenchFET®

Element Configuration :

Single

ECCN Code :

EAR99