SI8810EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

245pF @ 10V

Rds On (Max) @ Id, Vgs :

72m Ω @ 1A, 4.5V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Rise Time :

12ns

Published :

2016

Power Dissipation-Max :

500mW Ta

Fall Time (Typ) :

7 ns

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

25 ns

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

900mV @ 250μA

Number of Pins :

4

Mount :

Surface Mount

Package / Case :

4-XFBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

900mW

Continuous Drain Current (ID) :

2.1A

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 8V

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

21 Weeks

JESD-609 Code :

e3

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Radiation Hardening :

No