SI8800EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation :

900mW

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

350 ns

Rds On (Max) @ Id, Vgs :

80m Ω @ 1A, 4.5V

Radiation Hardening :

No

Continuous Drain Current (ID) :

2.8A

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 8V

Vgs (Max) :

±8V

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Factory Lead Time :

30 Weeks

JESD-609 Code :

e3

Number of Channels :

2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

FET Type :

N-Channel

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Package / Case :

4-XFBGA, CSPBGA

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

2A

Published :

2015

Lead Free :

Lead Free

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Form :

Ball

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Resistance :

80mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

4

Pin Count :

4

Power Dissipation-Max :

500mW Ta

Pbfree Code :

yes

Transistor Element Material :

SILICON