SI8800EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 8V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

500mW Ta

Series :

TrenchFET®

Number of Pins :

4

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

2A

Vgs (Max) :

±8V

Terminal Finish :

MATTE TIN

Radiation Hardening :

No

Published :

2015

Lead Free :

Lead Free

Package / Case :

4-XFBGA, CSPBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

350 ns

RoHS Status :

ROHS3 Compliant

Resistance :

80mOhm

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Element Configuration :

Dual

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

4

Power Dissipation :

900mW

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

80m Ω @ 1A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

20V

Terminal Form :

Ball

Continuous Drain Current (ID) :

2.8A

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Pin Count :

4

Number of Channels :

2

JESD-609 Code :

e3

Factory Lead Time :

30 Weeks

Mount :

Surface Mount

Pbfree Code :

yes