SI8808DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Published :

2013

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

4

FET Type :

N-Channel

Packaging :

Digi-Reel®

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Ball

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 8V

Mounting Type :

Surface Mount

Number of Pins :

4

Continuous Drain Current (ID) :

2.5A

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

Package / Case :

4-UFBGA

Terminal Position :

BOTTOM

Reach Compliance Code :

Unknown

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

95m Ω @ 1A, 4.5V

Mount :

Surface Mount

Factory Lead Time :

30 Weeks

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

900mV @ 250μA

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Power Dissipation :

900mW