SI8808DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

95m Ω @ 1A, 4.5V

Terminal Form :

Ball

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 8V

Number of Elements :

1

Power Dissipation :

900mW

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Terminations :

4

Number of Channels :

1

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Published :

2013

Vgs(th) (Max) @ Id :

900mV @ 250μA

Transistor Element Material :

SILICON

Packaging :

Digi-Reel®

Continuous Drain Current (ID) :

2.5A

Terminal Finish :

Matte Tin (Sn)

Package / Case :

4-UFBGA

Factory Lead Time :

30 Weeks

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

Terminal Position :

BOTTOM

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

JESD-609 Code :

e3