SI8806DB-T2-E1
Or copy the link below:
- Mfr.Part #
- SI8806DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 4-XFBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 4MICROFOOT
- Stock
- 1,300
- In Stock ：
- 1,300
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 20ns
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 1A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 8V
- Published :
- 2013
- Turn-Off Delay Time :
- 30 ns
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 840μm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation-Max :
- 500mW Ta
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 8V
- Threshold Voltage :
- 400mV
- Vgs (Max) :
- ±8V
- Factory Lead Time :
- 44 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Element Configuration :
- Single
- Package / Case :
- 4-XFBGA
- Continuous Drain Current (ID) :
- 3.9A
- Number of Channels :
- 1
- Fall Time (Typ) :
- 12 ns
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 12V
- JESD-609 Code :
- e3
- Length :
- 840μm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 900mW
- REACH SVHC :
- No SVHC
- Height :
- 213μm
- Number of Pins :
- 4
- FET Type :
- N-Channel
- Series :
- TrenchFET®
- Turn On Delay Time :
- 10 ns
- ECCN Code :
- EAR99
- Datasheets
- SI8806DB-T2-E1
N-Channel Tape & Reel (TR) 43m Ω @ 1A, 4.5V ±8V 17nC @ 8V 12V 4-XFBGA
SI8806DB-T2-E1 Overview
This device conducts a continuous drain current (ID) of 3.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has 400mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
SI8806DB-T2-E1 Features
a continuous drain current (ID) of 3.9A
the turn-off delay time is 30 ns
a threshold voltage of 400mV
a 12V drain to source voltage (Vdss)
SI8806DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8806DB-T2-E1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI8800EDB-T2-E1 | Vishay | 7,030 | MOSFET N-CH 20V 4MICROFOOT |
| SI8802DB-T2-E1 | Vishay | 27,394 | MOSFET N-CH 8V 4MICROFOOT |
| SI8805EDB-T2-E1 | Vishay | 36,569 | MOSFET P-CH 8V 4MICROFOOT |
| SI8808DB-T2-E1 | Vishay | 74,095 | MOSFET N-CH 30V 4MICROFOOT |
| SI8809EDB-T2-E1 | Vishay | 15,732 | MOSFET P-CH 20V 1.9A MICROFOOT |
| SI8810EDB-T2-E1 | Vishay | 2,123 | MOSFET N-CH 20V 2.1A MICROFOOT |
| SI8812DB-T2-E1 | Vishay | 116,198 | MOSFET N-CH 20V 4MICROFOOT |
| SI8816EDB-T2-E1 | Vishay | 47,361 | MOSFET N-CH 30V 4MICROFOOT |
| SI8817DB-T2-E1 | Vishay | 41,542 | MOSFET P-CH 20V 4MICROFOOT |
| SI8819EDB-T2-E1 | Vishay | 17,976 | MOSFET P-CH 12V 2.9A 4MICRO FOOT |
| SI8821EDB-T2-E1 | Vishay | 3,194 | MOSFET P-CH 30V 4MICROFOOT |
| SI88220BC-IS | Vishay | 17,764 | DGTL ISO 5000VRMS 2CH GP 16SOIC |
| SI88220BC-ISR | Vishay | 34,601 | DGTL ISO 5000VRMS 2CH GP 16SOIC |
| SI88220BD-IS | Vishay | 41,160 | DGTL ISO 5KV 2CH GEN PURP 16SOIC |
| SI88220BD-ISR | Vishay | 12,476 | DGTL ISO 5KV 2CH GEN PURP 16SOIC |
- Follow Us
-
- Payment
-
- Subscribe
- Certification
-
-
