SI8809EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

15 Weeks

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pin Count :

4

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

90m Ω @ 1.5A, 4.5V

Mount :

Surface Mount

Package / Case :

4-XFBGA

Vgs (Max) :

±8V

Number of Channels :

1

Terminal Form :

Ball

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

Pure Matte Tin (Sn)

Number of Terminations :

4

Published :

2017

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

900mV @ 250μA

Element Configuration :

Single

Series :

TrenchFET®

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Power Dissipation :

500mW

Power Dissipation-Max :

500mW Ta

DS Breakdown Voltage-Min :

20V

Terminal Position :

BOTTOM

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

-2.6A

Time@Peak Reflow Temperature-Max (s) :

30