SI8809EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Number of Channels :

1

Continuous Drain Current (ID) :

-2.6A

Mounting Type :

Surface Mount

Terminal Finish :

Pure Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

900mV @ 250μA

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

DS Breakdown Voltage-Min :

20V

Number of Pins :

4

Radiation Hardening :

No

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

90m Ω @ 1.5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 8V

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±8V

Published :

2017

Factory Lead Time :

15 Weeks

Element Configuration :

Single

Power Dissipation-Max :

500mW Ta

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

500mW

ECCN Code :

EAR99

Package / Case :

4-XFBGA

Terminal Form :

Ball

Number of Terminations :

4