SI8802DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

54m Ω @ 1A, 4.5V

Fall Time (Typ) :

7 ns

Transistor Application :

SWITCHING

Rise Time :

15ns

Power Dissipation-Max :

500mW Ta

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

8V

Power Dissipation :

500mW

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

700mV @ 250μA

Factory Lead Time :

30 Weeks

Terminal Form :

Ball

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Pins :

4

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

5V

ECCN Code :

EAR99

Vgs (Max) :

±5V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminations :

4

Element Configuration :

Single

Resistance :

54mOhm

Nominal Vgs :

350 mV

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Continuous Drain Current (ID) :

3.5A

FET Type :

N-Channel

Terminal Position :

BOTTOM

Packaging :

Digi-Reel®

Pin Count :

4

Turn On Delay Time :

5 ns

Transistor Element Material :

SILICON

Package / Case :

4-XFBGA

Published :

2015

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Number of Channels :

1