SI8802DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

7 ns

JESD-609 Code :

e3

Nominal Vgs :

350 mV

Contact Plating :

Tin

Turn On Delay Time :

5 ns

Drain to Source Breakdown Voltage :

8V

Number of Terminations :

4

Vgs (Max) :

±5V

Power Dissipation-Max :

500mW Ta

Number of Pins :

4

Continuous Drain Current (ID) :

3.5A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

54m Ω @ 1A, 4.5V

Packaging :

Digi-Reel®

Mount :

Surface Mount

Published :

2015

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Package / Case :

4-XFBGA

Gate to Source Voltage (Vgs) :

5V

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

700mV @ 250μA

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Number of Channels :

1

Rise Time :

15ns

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Turn-Off Delay Time :

22 ns

Lead Free :

Lead Free

Series :

TrenchFET®

Mounting Type :

Surface Mount

Terminal Form :

Ball

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

500mW

Factory Lead Time :

30 Weeks

Transistor Element Material :

SILICON

Resistance :

54mOhm

REACH SVHC :

Unknown