SH8M3TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

4.5A

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

5A 4.5A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 5V

Mounting Type :

Surface Mount

FET Type :

N and P-Channel

Published :

2009

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Factory Lead Time :

52 Weeks

Base Part Number :

*M3