SH8M12TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

5A 4.5A

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Mounting Type :

Surface Mount

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4.5A

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V