SH8M11TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

98m Ω @ 3.5A, 10V

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

1.9nC @ 5V

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N and P-Channel

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power - Max :

2W

Continuous Drain Current (ID) :

3.5A