QS8M12TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Published :

2011

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.063Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Radiation Hardening :

No

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN COPPER

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 5V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Max Power Dissipation :

1.5W

Number of Pins :

8

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Base Part Number :

*M12

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

4A

Rds On (Max) @ Id, Vgs :

42m Ω @ 4A, 10V

Pulsed Drain Current-Max (IDM) :

12A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

8-SMD, Flat Lead

Pin Count :

8

Mounting Type :

Surface Mount