QS8M51TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2A 1.5A

Pulsed Drain Current-Max (IDM) :

6A

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

*M51

Drain-source On Resistance-Max :

0.355Ohm

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

2A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Published :

2015

Max Power Dissipation :

1.5W

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Pin Count :

8

Lead Free :

Lead Free

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

20V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Position :

Dual

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V

DS Breakdown Voltage-Min :

100V

FET Feature :

Logic Level Gate

Number of Elements :

2

Continuous Drain Current (ID) :

1.5A

Number of Pins :

8

Package / Case :

8-SMD, Flat Lead

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

325m Ω @ 2A, 10V

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 5V