QS8M13TCR
- Mfr.Part #
- QS8M13TCR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 6A/5A TSMT8
- Stock
- 6,754
- In Stock :
- 6,754
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 390pF @ 10V
- Drain Current-Max (Abs) (ID) :
- 6A
- Package / Case :
- 8-SMD, Flat Lead
- FET Feature :
- Logic Level Gate
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Radiation Hardening :
- No
- Rise Time :
- 40ns
- Continuous Drain Current (ID) :
- 5A
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N and P-Channel
- JESD-609 Code :
- e2
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Power Dissipation :
- 1.5W
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 6A 5A
- DS Breakdown Voltage-Min :
- 30V
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 5.5nC @ 5V
- Number of Terminations :
- 8
- Base Part Number :
- *M13
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 30V
- Factory Lead Time :
- 52 Weeks
- Mount :
- Surface Mount
- Number of Elements :
- 2
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 6A, 10V
- Drain-source On Resistance-Max :
- 0.039Ohm
- Terminal Finish :
- TIN COPPER
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- QS8M13TCR

QS8M13TCR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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