QS8M13TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

390pF @ 10V

Mount :

Surface Mount

Rise Time :

40ns

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

Max Power Dissipation :

1.5W

Pbfree Code :

yes

Terminal Finish :

TIN COPPER

JESD-609 Code :

e2

Current - Continuous Drain (Id) @ 25°C :

6A 5A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Pin Count :

8

FET Type :

N and P-Channel

Drain-source On Resistance-Max :

0.039Ohm

Number of Terminations :

8

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Base Part Number :

*M13

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

10

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain Current-Max (Abs) (ID) :

6A

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SMD, Flat Lead

Number of Elements :

2

Continuous Drain Current (ID) :

5A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Factory Lead Time :

52 Weeks

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Published :

2011