PEMD12,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Length :

6.35mm

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Base (R1) :

47k Ω

Terminal Finish :

Tin (Sn)

Resistor - Emitter Base (R2) :

47k Ω

Element Configuration :

Dual

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Height :

6.35mm

Power Dissipation :

300mW

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

hFE Min :

80

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector Cutoff (Max) :

1μA

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MD12

Number of Pins :

6

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Polarity :

NPN, PNP

Lead Free :

Lead Free

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Width :

6.35mm

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat