PEMD12,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-65°C

Weight :

4.535924g

Max Power Dissipation :

300mW

Element Configuration :

Dual

Published :

2011

Termination :

SMD/SMT

Polarity :

NPN, PNP

Power Dissipation :

300mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Package / Case :

SOT-563, SOT-666

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Height :

6.35mm

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

47k Ω

RoHS Status :

ROHS3 Compliant

Length :

6.35mm

Radiation Hardening :

No

Pin Count :

6

Number of Elements :

2

Current - Collector Cutoff (Max) :

1μA

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Base Part Number :

MD12

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

80

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Width :

6.35mm

Number of Pins :

6

Resistor - Base (R1) :

47k Ω

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Max Collector Current :

100mA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount