PEMD18,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Base Part Number :

MD18

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Published :

2011

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

6

JESD-609 Code :

e3

Package / Case :

SOT-563, SOT-666

Resistor - Base (R1) :

4.7k Ω

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Number of Elements :

2

Resistor - Emitter Base (R2) :

10k Ω

Terminal Finish :

Tin (Sn)

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 2.1

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Min Operating Temperature :

-65°C

Max Breakdown Voltage :

50V

Number of Pins :

6

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

1μA

Packaging :

Tape and Reel (TR)