PEMD13,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Power Dissipation :

300mW

Weight :

4.535924g

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Polarity :

NPN, PNP

hFE Min :

100

Continuous Collector Current :

100mA

Terminal Form :

Flat

Width :

1.3mm

Resistor - Emitter Base (R2) :

47k Ω

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Pin Count :

6

Length :

1.7mm

Number of Channels :

2

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

Max Collector Current :

100mA

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Height :

600μm

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Power Dissipation :

300mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 10

Max Operating Temperature :

150°C

Base Part Number :

MD13

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Pins :

6

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max) :

1μA

REACH SVHC :

No SVHC

Number of Terminations :

6

Published :

2011

Mounting Type :

Surface Mount

Resistor - Base (R1) :

4.7k Ω

Package / Case :

SOT-563, SOT-666

Termination :

SMD/SMT