PEMD13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

1μA

Mount :

Surface Mount

Published :

2011

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Number of Channels :

2

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

hFE Min :

100

Height :

600μm

Continuous Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 10

Lead Free :

Lead Free

Base Part Number :

MD13

ECCN Code :

EAR99

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Package / Case :

SOT-563, SOT-666

REACH SVHC :

No SVHC

Radiation Hardening :

No

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Number of Pins :

6

Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Width :

1.3mm

JESD-609 Code :

e3

Pin Count :

6

Polarity :

NPN, PNP

Max Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

Number of Elements :

2

Length :

1.7mm