PEMD13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

Max Power Dissipation :

300mW

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Number of Elements :

2

Power Dissipation :

300mW

Weight :

4.535924g

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Base Part Number :

MD13

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Number of Terminations :

6

Current - Collector Cutoff (Max) :

1μA

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Published :

2011

Mount :

Surface Mount

Continuous Collector Current :

100mA

REACH SVHC :

No SVHC

Height :

600μm

Factory Lead Time :

4 Weeks

Resistor - Emitter Base (R2) :

47k Ω

Resistor - Base (R1) :

4.7k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Width :

1.3mm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Number of Channels :

2

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 10

Radiation Hardening :

No

Min Operating Temperature :

-65°C

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Element Configuration :

Dual

Polarity :

NPN, PNP

hFE Min :

100

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Length :

1.7mm