PEMD10,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

6

Min Operating Temperature :

-65°C

Length :

1.7mm

Resistor - Emitter Base (R2) :

47k Ω

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

10V

Transistor Application :

SWITCHING

hFE Min :

100

Mounting Type :

Surface Mount

Published :

2003

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Package / Case :

SOT-563, SOT-666

Height :

600μm

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 21

ECCN Code :

EAR99

Max Collector Current :

100mA

Number of Terminations :

6

Current - Collector Cutoff (Max) :

1μA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

2.2k Ω

Number of Elements :

2

Pin Count :

6

Width :

1.3mm

Termination :

SMD/SMT

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

50V

Weight :

4.535924g

Mount :

Surface Mount

Base Part Number :

MD10

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW

Collector Emitter Saturation Voltage :

100mV

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN, PNP

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA