PEMD16115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

300mW

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector Cutoff (Max) :

1μA

Transistor Application :

SWITCHING

Published :

2011

Min Operating Temperature :

-65°C

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Resistor - Base (R1) :

22k Ω

Max Collector Current :

100mA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Pin Count :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Base Part Number :

MD16

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Polarity :

NPN, PNP

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Number of Pins :

6