PD85035C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

108W

Number of Elements :

1

JESD-609 Code :

e4

Max Operating Temperature :

200°C

Mount :

Screw

Terminal Form :

Flat

Min Operating Temperature :

-65°C

Terminal Finish :

Gold (Au)

Transistor Type :

LDMOS

Gate to Source Voltage (Vgs) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

8A

Package / Case :

M243

Current Rating :

8A

Pin Count :

2

Number of Pins :

243

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

40V

Number of Terminations :

3

ECCN Code :

EAR99

Packaging :

Bulk

Current - Test :

350mA

Element Configuration :

Single

Base Part Number :

PD85035

Frequency :

945MHz

Max Power Dissipation :

108W

Continuous Drain Current (ID) :

8A

Gain :

17.5dB

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

SOURCE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Output :

15W

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Voltage - Test :

13.6V

JESD-30 Code :

R-CDFM-F3

Transistor Application :

AMPLIFIER