PD85015STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

ECCN Code :

EAR99

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

JESD-30 Code :

R-PDFP-F2

Current - Test :

150mA

Frequency :

870MHz

Transistor Type :

LDMOS

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Gain :

16dB

Voltage - Test :

13.6V

Base Part Number :

PD85015

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Power Dissipation :

59W

Gate to Source Voltage (Vgs) :

15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

5A

Pin Count :

10

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Max Power Dissipation :

59W

Qualification Status :

Not Qualified

Max Output Power :

20W

Min Operating Temperature :

-65°C

Transistor Application :

AMPLIFIER

Drain to Source Breakdown Voltage :

40V

Mount :

Surface Mount

Power - Output :

15W

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Current Rating :

5A

Element Configuration :

Single

Case Connection :

SOURCE

Max Operating Temperature :

165°C