PD85015TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Power Dissipation :

59W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

3

Continuous Drain Current (ID) :

5A

Drain to Source Voltage (Vdss) :

40V

Voltage - Test :

13.6V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

LDMOS

Drain to Source Breakdown Voltage :

40V

Max Output Power :

20W

Max Operating Temperature :

165°C

Terminal Form :

Gull wing

Factory Lead Time :

25 Weeks

Power - Output :

15W

Gain :

16dB

Pin Count :

10

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency :

870MHz

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

150mA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G2

Terminal Position :

Dual

Max Power Dissipation :

59W

Min Operating Temperature :

-65°C

Qualification Status :

Not Qualified

Current Rating :

5A

Packaging :

Tape and Reel (TR)

Additional Feature :

High Reliability

Base Part Number :

PD85015

Number of Elements :

1

Gate to Source Voltage (Vgs) :

15V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5A

ECCN Code :

EAR99

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER