PD85025TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Continuous Drain Current (ID) :

7A

Current - Test :

300mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Number of Pins :

3

Gain :

17.3dB

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G2

Current Rating :

7A

Qualification Status :

Not Qualified

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Output :

10W

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Packaging :

Tape and Reel (TR)

Power Dissipation :

79W

Mount :

Surface Mount

Factory Lead Time :

25 Weeks

Min Operating Temperature :

-65°C

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

7A

Gate to Source Voltage (Vgs) :

15V

Frequency :

870MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

PD85025

Transistor Type :

LDMOS

Max Operating Temperature :

165°C

Max Output Power :

30W

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

Voltage - Test :

13.6V

Transistor Application :

AMPLIFIER

Pin Count :

10

Max Power Dissipation :

79W

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2