PD85015S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Element Configuration :

Single

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Pin Count :

10

Terminal Position :

Dual

Terminal Form :

Flat

Power Dissipation :

59W

JESD-30 Code :

R-PDFP-F2

Min Operating Temperature :

-65°C

Max Operating Temperature :

165°C

Packaging :

Tube

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

5A

Max Power Dissipation :

59W

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Output :

15W

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Additional Feature :

High Reliability

Current Rating :

5A

Radiation Hardening :

No

Factory Lead Time :

11 Weeks

Package / Case :

PowerSO-10 Exposed Bottom Pad

Gain :

16dB

Max Output Power :

20W

Transistor Type :

LDMOS

Case Connection :

SOURCE

Drain to Source Breakdown Voltage :

40V

Voltage - Test :

13.6V

Drain Current-Max (Abs) (ID) :

5A

Number of Elements :

1

Base Part Number :

PD85015

Current - Test :

150mA

Mount :

Surface Mount

Frequency :

870MHz

Gate to Source Voltage (Vgs) :

15V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

3

Transistor Application :

AMPLIFIER