PD85015S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Breakdown Voltage :

40V

Max Output Power :

20W

Current Rating :

5A

Gate to Source Voltage (Vgs) :

15V

Additional Feature :

High Reliability

Number of Pins :

3

Max Operating Temperature :

165°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Current - Test :

150mA

Pin Count :

10

Power Dissipation :

59W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Factory Lead Time :

11 Weeks

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Flat

JESD-30 Code :

R-PDFP-F2

Frequency :

870MHz

Voltage - Test :

13.6V

Number of Terminations :

2

Min Operating Temperature :

-65°C

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

5A

Max Power Dissipation :

59W

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Transistor Type :

LDMOS

Case Connection :

SOURCE

Number of Elements :

1

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

40V

Gain :

16dB

Power - Output :

15W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Base Part Number :

PD85015