PD85006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

2A

JESD-609 Code :

e3

Pin Count :

10

Transistor Type :

LDMOS

Drain Current-Max (Abs) (ID) :

2A

Max Operating Temperature :

165°C

Terminal Finish :

Matte Tin (Sn) - annealed

Max Output Power :

6W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

250

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Frequency :

870MHz

Additional Feature :

High Reliability

Min Operating Temperature :

-65°C

Polarity/Channel Type :

N-Channel

Factory Lead Time :

11 Weeks

Qualification Status :

Not Qualified

Voltage - Test :

13.6V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

36.5W

JESD-30 Code :

R-PDSO-G2

Drain to Source Voltage (Vdss) :

40V

Number of Pins :

3

Mount :

Surface Mount

Max Power Dissipation :

36.5W

Gain :

17dB

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Terminations :

2

Case Connection :

SOURCE

Gate to Source Voltage (Vgs) :

15V

Number of Elements :

1

ECCN Code :

EAR99

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Current Rating :

2A

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Current - Test :

200mA

Base Part Number :

PD85006