PD85006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

2A

Number of Terminations :

2

Pin Count :

10

Continuous Drain Current (ID) :

2A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

2A

Drain to Source Breakdown Voltage :

40V

Packaging :

Tube

Terminal Position :

Dual

Case Connection :

SOURCE

Factory Lead Time :

11 Weeks

Additional Feature :

High Reliability

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

36.5W

Terminal Finish :

Matte Tin (Sn) - annealed

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Frequency :

870MHz

Gain :

17dB

Transistor Type :

LDMOS

Max Power Dissipation :

36.5W

Terminal Form :

Gull wing

Package / Case :

PowerSO-10 Exposed Bottom Pad

Max Operating Temperature :

165°C

Transistor Application :

AMPLIFIER

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

13.6V

Number of Pins :

3

ECCN Code :

EAR99

Max Output Power :

6W

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Current - Test :

200mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G2

Number of Elements :

1

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

15V

Base Part Number :

PD85006

Drain to Source Voltage (Vdss) :

40V