PD85035-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Terminations :

2

JESD-609 Code :

e3

Radiation Hardening :

No

ECCN Code :

EAR99

Additional Feature :

High Reliability

Number of Elements :

1

Transistor Type :

LDMOS

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

SOURCE

Max Power Dissipation :

95W

Gain :

17dB

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

8A

Transistor Application :

AMPLIFIER

Frequency :

870MHz

Element Configuration :

Single

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Voltage - Test :

13.6V

Packaging :

Tube

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

250

Gate to Source Voltage (Vgs) :

15V

Operating Mode :

ENHANCEMENT MODE

Min Breakdown Voltage :

40V

Continuous Drain Current (ID) :

8A

Max Operating Temperature :

165°C

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

25 Weeks

JESD-30 Code :

R-PDSO-G2

Power Dissipation :

95W

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Max Output Power :

40W

Min Operating Temperature :

-65°C

Base Part Number :

PD85035

Mount :

Surface Mount

Number of Pins :

3

Power - Output :

15W

Polarity/Channel Type :

N-Channel

Pin Count :

10

Current Rating :

8A

Current - Test :

350mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)