PD85025STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

79W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

15V

Drain to Source Voltage (Vdss) :

40V

Mount :

Surface Mount

Pin Count :

10

Continuous Drain Current (ID) :

7A

Gain :

17.3dB

Current - Test :

300mA

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Max Output Power :

30W

Terminal Finish :

Matte Tin (Sn)

Current Rating :

7A

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Voltage - Test :

13.6V

Min Operating Temperature :

-65°C

Transistor Application :

AMPLIFIER

Terminal Form :

Flat

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F2

Reach Compliance Code :

not_compliant

Case Connection :

SOURCE

Number of Elements :

1

Max Operating Temperature :

165°C

RoHS Status :

ROHS3 Compliant

Power - Output :

10W

ECCN Code :

EAR99

Base Part Number :

PD85025

Drain Current-Max (Abs) (ID) :

7A

Frequency :

870MHz

Drain to Source Breakdown Voltage :

40V

Max Power Dissipation :

79W

Transistor Type :

LDMOS