PD57030S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

4A

Mount :

Surface Mount

Max Operating Temperature :

165°C

Transistor Application :

AMPLIFIER

Gain :

14dB

Drain Current-Max (Abs) (ID) :

4A

Polarity/Channel Type :

N-Channel

Power Dissipation :

52.8W

Current Rating :

4A

Package / Case :

PowerSO-10 Exposed Bottom Pad

Terminal Finish :

MATTE TIN

Pin Count :

2

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

250

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tube

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Number of Terminations :

2

JESD-609 Code :

e3

Number of Pins :

4

Base Part Number :

PD57030

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

SOURCE

Drain to Source Voltage (Vdss) :

65V

ECCN Code :

EAR99

Voltage - Rated DC :

65V

Transistor Type :

LDMOS

Voltage - Test :

28V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Current - Test :

50mA

Max Output Power :

30W

JESD-30 Code :

R-PDSO-F2

Max Power Dissipation :

52.8W

Frequency :

945MHz

Drain to Source Breakdown Voltage :

65V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Element Configuration :

Single