PD57030S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

4A

Drain Current-Max (Abs) (ID) :

4A

Gain :

14dB

Min Operating Temperature :

-65°C

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

65V

Terminal Form :

Flat

Max Operating Temperature :

165°C

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Pin Count :

2

Lead Free :

Lead Free

Current - Test :

50mA

Packaging :

Tube

Max Output Power :

30W

Mount :

Surface Mount

Max Power Dissipation :

52.8W

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

ECCN Code :

EAR99

Current Rating :

4A

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

250

Power Dissipation :

52.8W

Drain to Source Breakdown Voltage :

65V

Polarity/Channel Type :

N-Channel

Package / Case :

PowerSO-10 Exposed Bottom Pad

Base Part Number :

PD57030

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-F2

Radiation Hardening :

No

Frequency :

945MHz

Number of Pins :

4

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Transistor Type :

LDMOS

Voltage - Test :

28V

Voltage - Rated DC :

65V