PD55025S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Radiation Hardening :

No

Max Output Power :

25W

Terminal Position :

Dual

Base Part Number :

PD55025

Transistor Application :

AMPLIFIER

Current - Test :

200mA

Drain Current-Max (Abs) (ID) :

7A

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Pin Count :

10

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

250

Min Operating Temperature :

-65°C

Max Power Dissipation :

79W

ECCN Code :

EAR99

Voltage - Test :

12.5V

Polarity/Channel Type :

N-Channel

Terminal Form :

Flat

Power Gain :

14dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

Factory Lead Time :

25 Weeks

Packaging :

Tube

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

7A

Voltage - Rated DC :

40V

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

165°C

Lead Free :

Lead Free

Current Rating :

7A

Power Dissipation :

79W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Frequency :

500MHz

Drain to Source Breakdown Voltage :

40V

Gain :

14.5dB

Case Connection :

SOURCE

Number of Elements :

1

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F2

Transistor Type :

LDMOS

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

2