PD55025S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

12.5V

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

7A

Radiation Hardening :

No

Number of Elements :

1

Peak Reflow Temperature (Cel) :

250

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

-65°C

Gain :

14.5dB

Frequency :

500MHz

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Transistor Type :

LDMOS

Drain to Source Voltage (Vdss) :

40V

Transistor Application :

AMPLIFIER

Current Rating :

7A

Max Operating Temperature :

165°C

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

High Reliability

ECCN Code :

EAR99

Voltage - Rated DC :

40V

Power Gain :

14dB

Terminal Finish :

MATTE TIN

Case Connection :

SOURCE

Max Output Power :

25W

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Base Part Number :

PD55025

Factory Lead Time :

25 Weeks

Number of Pins :

4

Max Power Dissipation :

79W

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-30 Code :

R-PDSO-F2

Terminal Form :

Flat

Lead Free :

Lead Free

Power Dissipation :

79W

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Current - Test :

200mA