PD55025S-E

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Mfr.Part #
PD55025S-E
Manufacturer
STMicroelectronics
Package / Case
PowerSO-10 Exposed Bottom Pad
Datasheet
Download
Description
FET RF 40V 500MHZ PWRSO10
Stock
28,236
In Stock :
28,236

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - RF
Transistor Type :
LDMOS
Number of Terminations :
2
Lead Free :
Lead Free
Terminal Finish :
MATTE TIN
ECCN Code :
EAR99
Voltage - Rated DC :
40V
Base Part Number :
PD55025
Current - Test :
200mA
Case Connection :
SOURCE
Time@Peak Reflow Temperature-Max (s) :
30
Number of Pins :
4
Gain :
14.5dB
Gate to Source Voltage (Vgs) :
20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
79W
Frequency :
500MHz
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
Continuous Drain Current (ID) :
7A
Max Power Dissipation :
79W
Max Output Power :
25W
Max Operating Temperature :
165°C
Min Operating Temperature :
-65°C
Radiation Hardening :
No
Packaging :
Tube
Drain to Source Breakdown Voltage :
40V
Factory Lead Time :
25 Weeks
Mount :
Surface Mount
Terminal Form :
Flat
Terminal Position :
Dual
Additional Feature :
High Reliability
Number of Elements :
1
JESD-30 Code :
R-PDSO-F2
Drain to Source Voltage (Vdss) :
40V
Transistor Application :
AMPLIFIER
Voltage - Test :
12.5V
Package / Case :
PowerSO-10 Exposed Bottom Pad
Power Gain :
14dB
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
JESD-609 Code :
e3
Pin Count :
10
Drain Current-Max (Abs) (ID) :
7A
Current Rating :
7A
Peak Reflow Temperature (Cel) :
250
Operating Mode :
ENHANCEMENT MODE
Datasheets
PD55025S-E
Introducing Transistors - FETs, MOSFETs - RF STMicroelectronics PD55025S-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Base Part Number:PD55025, Number of Pins:4, Gain:14.5dB, Package / Case:PowerSO-10 Exposed Bottom Pad, PD55025S-E pinout, PD55025S-E datasheet PDF, PD55025S-E amp .Beyond Transistors - FETs, MOSFETs - RF STMicroelectronics PD55025S-E ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics PD55025S-E


PD55025S-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at

Description: The STMicroelectronics PD55025S-E is a N-Channel RF MOSFET transistor designed for use in RF power applications. It has a maximum drain-source voltage of 25V, a maximum drain current of 12.5A, and a maximum power dissipation of 50W. It is designed for use in RF power amplifiers operating up to 55MHz.

Features:
- N-Channel RF MOSFET transistor
- Maximum drain-source voltage of 25V
- Maximum drain current of 12.5A
- Maximum power dissipation of 50W
- Designed for use in RF power amplifiers operating up to 55MHz

Applications: The STMicroelectronics PD55025S-E is suitable for use in RF power amplifiers, RF power switching, and other RF power applications. It is suitable for use in a wide range of applications, including automotive, industrial, and consumer electronics.
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