NTJD5121NT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 20V

Surface Mount :

yes

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2011

Radiation Hardening :

No

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

250mW

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 4.5V

Continuous Drain Current (ID) :

295mA

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

LOW THRESHOLD

Length :

2.2mm

Width :

1.35mm

Turn On Delay Time :

22 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

32 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

NTJD5121N

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

34 ns

Threshold Voltage :

1.7V

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Transistor Application :

SWITCHING

Number of Pins :

6

Power Dissipation :

250mW

Height :

1mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rise Time :

34ns

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Pin Count :

6