NSBC144WPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

339mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 2.1

hFE Min :

80

Polarity/Channel Type :

NPN AND PNP

Radiation Hardening :

No

Surface Mount :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Power Dissipation :

231mW

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

47k Ω

Collector Emitter Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Terminal Form :

Flat

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Pins :

6

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

ECCN Code :

EAR99

Published :

2012

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

2

Package / Case :

SOT-963

Resistor - Emitter Base (R2) :

22k Ω

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Pin Count :

6

Continuous Collector Current :

100mA

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant