NSBC113EF3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pin Count :

3

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-1123

Collector Emitter Voltage (VCEO) :

250mV

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Max Power Dissipation :

254mW

Number of Elements :

1

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Resistor - Base (R1) :

1 k Ω

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Form :

Flat

Mounting Type :

Surface Mount

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Published :

2012

Resistor - Emitter Base (R2) :

1 k Ω

Reference Standard :

AEC-Q101

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN - Pre-Biased

Max Collector Current :

100mA