NSBC113EF3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Number of Elements :

1

Terminal Position :

Dual

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor - Emitter Base (R2) :

1 k Ω

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Transistor Type :

NPN - Pre-Biased

Max Power Dissipation :

254mW

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

250mV

ECCN Code :

EAR99

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

1 k Ω

Package / Case :

SOT-1123

Factory Lead Time :

5 Weeks

Reference Standard :

AEC-Q101

Pbfree Code :

yes

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

JESD-609 Code :

e3

Published :

2012

Mounting Type :

Surface Mount