NSBC114EDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

35

Power Dissipation :

357mW

Continuous Collector Current :

100mA

Max Power Dissipation :

500mW

Surface Mount :

yes

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Published :

2006

Min Operating Temperature :

-55°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

10k Ω

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Element Configuration :

Dual

Resistor - Base (R1) :

10k Ω

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

500nA

Pin Count :

6

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Current Rating :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Breakdown Voltage :

50V

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

REACH SVHC :

No SVHC

Number of Pins :

6

Pbfree Code :

yes

Contact Plating :

Tin

Base Part Number :

NSBC1*

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

17 Weeks

JESD-609 Code :

e3