NSBC113EDXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Pin Count :

6

Max Power Dissipation :

500mW

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

500nA

Current Rating :

100mA

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Qualification Status :

Not Qualified

Number of Terminations :

6

Resistor - Base (R1) :

1k Ω

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Lead Free :

Contains Lead

JESD-30 Code :

R-PDSO-F6

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

50V

Mount :

Surface Mount

Max Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Reach Compliance Code :

Unknown

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

1k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

250mV

Base Part Number :

NSBC1*

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3