NSBC114EF3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2010

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pin Count :

3

Min Operating Temperature :

-55°C

Surface Mount :

yes

Pbfree Code :

yes

Number of Elements :

1

Package / Case :

SOT-1123

Number of Terminations :

3

Transistor Type :

NPN - Pre-Biased

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

10 k Ω

Terminal Position :

Dual

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

hFE Min :

35

Terminal Form :

Flat

Number of Pins :

3

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Base Part Number :

NSBC1*

Max Power Dissipation :

254mW

Polarity :

NPN

Element Configuration :

Single