NSBC113EDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

2 Weeks

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Element Configuration :

Dual

Voltage - Rated DC :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

NSBC1*

Length :

1.6mm

Width :

1.2mm

Transistor Type :

2 NPN - Pre-Biased (Dual)

RoHS Status :

RoHS Compliant

Height :

550μm

Terminal Form :

Flat

hFE Min :

3

Packaging :

Tape and Reel (TR)

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Pin Count :

6

ECCN Code :

EAR99

Resistor - Base (R1) :

1k Ω

Published :

2005

Current Rating :

100mA

Resistor - Emitter Base (R2) :

1k Ω

Qualification Status :

Not Qualified

Pbfree Code :

yes

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Surface Mount :

yes

Polarity :

NPN

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

JESD-609 Code :

e3

Number of Pins :

6

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

250mV

Weight :

8.193012mg

Max Power Dissipation :

500mW

Min Operating Temperature :

-55°C

Package / Case :

SOT-563, SOT-666