NSBC114EDXV6
- Mfr.Part #
- NSBC114EDXV6
- Manufacturer
- onsemi
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.5W SOT563
- Stock
- 2,268
- In Stock :
- 2,268
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 100mA
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 1
- Surface Mount :
- yes
- Element Configuration :
- Dual
- Radiation Hardening :
- No
- Resistor - Base (R1) :
- 10k Ω
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA
- Number of Pins :
- 6
- Max Collector Current :
- 100mA
- Published :
- 2006
- Power Dissipation :
- 357mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 5mA 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Max Power Dissipation :
- 500mW
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Resistor - Emitter Base (R2) :
- 10k Ω
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Operating Temperature :
- 150°C
- hFE Min :
- 35
- Polarity :
- NPN
- Min Operating Temperature :
- -55°C
- Voltage - Rated DC :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 17 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Package / Case :
- SOT-563, SOT-666
- Contact Plating :
- Tin
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 100mA
- Pin Count :
- 6
- Base Part Number :
- NSBC1*
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- NSBC114EDXV6

NSBC114EDXV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available at
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