NSBC114EDXV6

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Flat

Polarity :

NPN

Mounting Type :

Surface Mount

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

10k Ω

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Base Part Number :

NSBC1*

Power Dissipation :

357mW

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

Pbfree Code :

yes

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Power Dissipation :

500mW

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Contact Plating :

Tin

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Max Operating Temperature :

150°C

Resistor - Base (R1) :

10k Ω

Continuous Collector Current :

100mA

Current Rating :

100mA

Transistor Application :

SWITCHING

Number of Pins :

6

Pin Count :

6

Factory Lead Time :

17 Weeks

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

hFE Min :

35

Number of Terminations :

6

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40