NSBC114EDXV6

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Surface Mount :

yes

Element Configuration :

Dual

Radiation Hardening :

No

Resistor - Base (R1) :

10k Ω

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

6

Max Collector Current :

100mA

Published :

2006

Power Dissipation :

357mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Form :

Flat

Max Power Dissipation :

500mW

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

10k Ω

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Max Operating Temperature :

150°C

hFE Min :

35

Polarity :

NPN

Min Operating Temperature :

-55°C

Voltage - Rated DC :

50V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Package / Case :

SOT-563, SOT-666

Contact Plating :

Tin

Number of Elements :

2

JESD-609 Code :

e3

Continuous Collector Current :

100mA

Pin Count :

6

Base Part Number :

NSBC1*

Number of Terminations :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99