NSBC144WDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 NPN - Pre-Biased (Dual)

Published :

2012

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 0.47

Transistor Element Material :

SILICON

Pin Count :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Power - Max :

500mW

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

47k Ω

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

17 Weeks

Surface Mount :

yes

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

500mW

Pbfree Code :

yes

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

250mV

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Qualification Status :

Not Qualified

hFE Min :

80

Resistor - Emitter Base (R2) :

22k Ω

Number of Terminations :

6

Max Collector Current :

100mA